Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form UNSPECIFIED
Reach Compliance Code unknown
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 830W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 105A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 69500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 210A Tc
Gate Charge (Qg) (Max) @ Vgs 740nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 210A
Drain-source On Resistance-Max 0.0075Ohm
Pulsed Drain Current-Max (IDM) 800A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 3000 mJ