IXTM6N90A
RoHS 
RoHS compliant
RoHS compliantPackage TO-204AA, TO-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
POWER MOSFET TO-3
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 35
Pin Count 2
JESD-30 Code O-MBFM-P2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 180W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 6A
DS Breakdown Voltage-Min 900V
Pulsed Drain Current-Max (IDM) 24A
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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