IXTM35N30
RoHS 
RoHS compliant
RoHS compliantPackage TO-204AE
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
POWER MOSFET TO-3
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
DS Breakdown Voltage-Min 300V
Drain-source On Resistance-Max 0.1Ohm
Drain Current-Max (Abs) (ID) 35A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 300V
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 100m Ω @ 17.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 300W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-MBFM-P2
Terminal Form PIN/PEG
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series GigaMOS?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-204AE
Mounting Type Through Hole
Alternative Model
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