IXTM15N60
RoHS 
RoHS compliant
RoHS compliantPackage /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
POWER MOSFET TO-3
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Power Dissipation Ambient-Max 300W
Power Dissipation-Max (Abs) 250W
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 600V
Drain-source On Resistance-Max 0.5Ohm
Drain Current-Max (Abs) (ID) 15A
JEDEC-95 Code TO-204AE
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code O-MBFM-P2
Terminal Form PIN/PEG
Terminal Position BOTTOM
Subcategory FET General Purpose Power
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Physical
Transistor Element Material SILICON
Surface Mount NO
Alternative Model
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