Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 960W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 24000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 610nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 60A
DS Breakdown Voltage-Min 500V