Avalanche Energy Rating (Eas) 2500 mJ
DS Breakdown Voltage-Min 2500V
Pulsed Drain Current-Max (IDM) 20A
Drain Current-Max (Abs) (ID) 5A
Continuous Drain Current (ID) 5A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 2500V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Input Capacitance (Ciss) (Max) @ Vds 8560pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 8.8 Ω @ 2.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 960W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ