IXTK250N10
RoHS
/
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 250A TO-264AA
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
Series MegaMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 730W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 730W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 250A Tc
Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 250A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.005Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 1000A
Avalanche Energy Rating (Eas) 4000 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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