Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Terminal Form THROUGH-HOLE
Operating Temperature (Max) 150°C
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Drain Current-Max (Abs) (ID) 210A
Drain-source On Resistance-Max 0.0075Ohm
Pulsed Drain Current-Max (IDM) 800A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 3000 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 1040W