IXTK120P20T
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
N-Channel 200 V 30 mOhm Through Hole Power Mosfet - TO-264
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Buying Options
Total Price: USD $29.09
Unit Price: USD $29.08747
≥1 USD $29.08747
≥10 USD $27.44101
≥100 USD $25.88774
≥500 USD $24.4224
≥1000 USD $23.04
≥3000 USD $21.73585
Inventory: 8974
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Technical
Packaging Tube
Published 2013
Series TrenchP?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Max Power Dissipation 1.04kW
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 73000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 740nC @ 10V
Drain to Source Voltage (Vdss) 200V
Continuous Drain Current (ID) 120A
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 3000 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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