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IXTK120N20P

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 120A TO-264
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Technical Details

Supply Chain

Factory Lead Time 28 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series PolarHT?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 714W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 714W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Rise Time 35 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.022Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 300A
Avalanche Energy Rating (Eas) 2000 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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