IXTH86N25T
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
DISCMSFT NCHTRENCHGATE-GEN1 TO-2
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Buying Options
Total Price: USD $63.13
Unit Price: USD $63.1332
≥1 USD $63.1332
≥10 USD $51.8016
≥100 USD $50.1828
≥500 USD $48.564
≥1000 USD $46.9452
Inventory: 1100
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 1500 mJ
DS Breakdown Voltage-Min 250V
Pulsed Drain Current-Max (IDM) 190A
Drain-source On Resistance-Max 0.037Ohm
Drain Current-Max (Abs) (ID) 86A
JEDEC-95 Code TO-247AD
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Current - Continuous Drain (Id) @ 25°C 86A Tc
Input Capacitance (Ciss) (Max) @ Vds 5330pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 37m Ω @ 43A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 540W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2012
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-247-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 30 Weeks
Alternative Model
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