IXTH76P10T
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 76A TO-247
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Buying Options
Total Price: USD $5.75
Unit Price: USD $5.7475
≥1 USD $5.7475
≥10 USD $4.71675
≥100 USD $4.56855
≥500 USD $4.4213
≥1000 USD $4.27405
≥3000 USD $3.8323
Inventory: 16
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series TrenchP?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 298W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 298W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Continuous Drain Current (ID) 76A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.024Ohm
Pulsed Drain Current-Max (IDM) 230A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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