FET Feature Depletion Mode
Continuous Drain Current (ID) 6A
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 25V
Rds On (Max) @ Id, Vgs 2.2 Ω @ 3A, 0V
Transistor Application SWITCHING
Power Dissipation-Max 300W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ