IXTH58N25L2
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
DISC MOSFET N-CH LINEAR L2 TO-24
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Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Technical
Operating Temperature -55°C~150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 540W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 64m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 58A Tc
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
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