IXTH50N30
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 300V 50A TO-247
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 400W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Rise Time 33ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 50A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.065Ohm
Drain to Source Breakdown Voltage 300V
Pulsed Drain Current-Max (IDM) 200A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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