IXTH3N100P
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 3A TO-247
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Buying Options
Total Price: USD $11.66
Unit Price: USD $11.655372
≥1 USD $11.655372
≥10 USD $10.995629
≥100 USD $10.373241
≥500 USD $9.786085
≥1000 USD $9.232148
Inventory: 1272
Minimum: 1
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Technical Details
Technical
Pulsed Drain Current-Max (IDM) 6A
Avalanche Energy Rating (Eas) 200 mJ
Drain to Source Breakdown Voltage 1kV
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-247AD
Continuous Drain Current (ID) 3A
Turn-Off Delay Time 75 ns
Fall Time (Typ) 29 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 27ns
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 4.8 Ω @ 1.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 125W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 125W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series PolarVHV?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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