FET Feature Depletion Mode
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2A
Drive Voltage (Max Rds On,Min Rds On) 0V
Drain to Source Voltage (Vdss) 1700V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 5V
Current - Continuous Drain (Id) @ 25°C 2A Tj
Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 10V
Rds On (Max) @ Id, Vgs 6.5 Ω @ 1A, 0V
Power Dissipation-Max 568W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ