FET Feature Depletion Mode
Pulsed Drain Current-Max (IDM) 50A
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 0.33Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 110 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Rds On (Max) @ Id, Vgs 330m Ω @ 10A, 10V
Transistor Application SWITCHING
Element Configuration Single
Power Dissipation-Max 400W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~150°C TJ