IXTH200N10T
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 200A TO-247
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Buying Options
Total Price: USD $8.1
Unit Price: USD $8.097449
≥1 USD $8.097449
≥10 USD $7.117644
≥100 USD $6.51982
Inventory: 10
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchMV?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5.5MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 550W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 550W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Rise Time 31ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 200A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 500A
Avalanche Energy Rating (Eas) 1500 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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