IXTH200N075T
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 200A TO-247
PDF
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Buying Options
Total Price: USD $6.71
Unit Price: USD $6.7127
≥1 USD $6.7127
≥10 USD $5.5081
≥100 USD $5.3352
≥500 USD $5.16325
≥1000 USD $4.9913
Inventory: 1112
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 430W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 430W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 57ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 52 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 200A
JEDEC-95 Code TO-247AD
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 540A
Avalanche Energy Rating (Eas) 750 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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