Pulsed Drain Current-Max (IDM) 52A
Drain to Source Breakdown Voltage 1.1kV
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 13A
Turn-Off Delay Time 80 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1100V
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Input Capacitance (Ciss) (Max) @ Vds 5650pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 920m Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 360W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) Not Applicable
Operating Temperature -55°C~150°C TJ