IXTH12N100
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 12A TO-247
PDF
/
Buying Options
Total Price: USD $1.66
Unit Price: USD $1.65965
≥1 USD $1.65965
≥10 USD $1.36135
≥100 USD $1.31955
≥500 USD $1.2768
≥1000 USD $1.23405
Inventory: 20314
Minimum: 1
-
+
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series MegaMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.05Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.05 Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 33ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 12A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 48A
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
IXTH12N100+price,IXTH12N100+datasheet,IXTH12N100+in stock,buy+IXTH12N100,finder+IXTH12N100,IXTH12N100+tutorials,IXTH12N100+download