IXTH10N100D2
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 10A TO-247
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Buying Options
Total Price: USD $17.84
Unit Price: USD $17.8376
≥1 USD $17.8376
≥10 USD $14.44285
≥100 USD $13.59336
≥500 USD $12.318997
Inventory: 220
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
FET Feature Depletion Mode
DS Breakdown Voltage-Min 1000V
Continuous Drain Current (ID) 10A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 5V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 5320pF @ 25V
Rds On (Max) @ Id, Vgs 1.5 Ω @ 5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 695W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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