Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 113W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 625 Ω @ 10mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 246pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 10V
Drain to Source Voltage (Vdss) 4500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 200mA
Drain Current-Max (Abs) (ID) 0.2A
Pulsed Drain Current-Max (IDM) 0.6A
DS Breakdown Voltage-Min 4500V