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IXTF03N400

IXYS
RoHS
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Package i4-Pac?-5 (3 Leads)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET HI VOLTAGE MOSFET N-CHANNEL
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case i4-Pac?-5 (3 Leads)
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 70W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300 Ω @ 150mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Tc
Gate Charge (Qg) (Max) @ Vgs 16.3nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 4000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 58 ns
Turn-Off Delay Time 86 ns
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.3A
Drain to Source Breakdown Voltage 4kV
Pulsed Drain Current-Max (IDM) 0.8A

Compliance

RoHS Status RoHS Compliant

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