IXTD3N60P-2J
RoHS
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Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600
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Technical Details
Technical
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Input Capacitance (Ciss) (Max) @ Vds 411pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 50μA
Rds On (Max) @ Id, Vgs 2.9 Ω @ 1.5A, 10V
FET Type N-Channel
Power Dissipation-Max 70W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series PolarHV?
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Package / Case Die
Mounting Type Surface Mount
Alternative Model
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