IXTC110N25T
RoHS
/
Package ISOPLUS220?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 50A ISOPLUS220
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 1000 mJ
Drain to Source Breakdown Voltage 250V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 50A
Turn-Off Delay Time 60 ns
Fall Time (Typ) 27 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 27ns
Gate Charge (Qg) (Max) @ Vgs 157nC @ 10V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Rds On (Max) @ Id, Vgs 27m Ω @ 55A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 180W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 180W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Resistance 27MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2012
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case ISOPLUS220?
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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