IXTA90N055T
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 90A TO-263
PDF
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Buying Options
Total Price: USD $5.37
Unit Price: USD $5.37035
≥1 USD $5.37035
≥10 USD $4.4061
≥100 USD $4.26835
≥500 USD $4.1306
≥1000 USD $3.99285
Inventory: 1157
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series TrenchT2?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 176W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 176W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 90A
Drain-source On Resistance-Max 0.0088Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 400 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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