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IXTA75N10P

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 75A TO-263
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Buying Options
Total Price: USD $4.35
Unit Price: USD $4.3472
≥1 USD $4.3472
≥10 USD $3.44608
≥100 USD $2.953808
≥500 USD $2.625586
≥1000 USD $2.248162
≥3000 USD $2.116884
Inventory: 996
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 1000 mJ
Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.025Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 75A
Turn-Off Delay Time 66 ns
Fall Time (Typ) 45 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 53 ns
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Rds On (Max) @ Id, Vgs 25m Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 360W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 360W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 28 Weeks

Alternative Model

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