IXTA6N50D2
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 6A D2PAK
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Buying Options
Total Price: USD $8.24
Unit Price: USD $8.2368
≥1 USD $8.2368
≥10 USD $6.577648
≥100 USD $5.885176
≥500 USD $5.19281
≥1000 USD $4.67353
≥3000 USD $4.379276
Inventory: 1043
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
FET Feature Depletion Mode
Drain-source On Resistance-Max 0.5Ohm
Continuous Drain Current (ID) 6A
Vgs (Max) ±20V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 96nC @ 5V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V
Rds On (Max) @ Id, Vgs 500m Ω @ 3A, 0V
Transistor Application AMPLIFIER
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 300W
Power Dissipation-Max 300W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Alternative Model
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