Avalanche Energy Rating (Eas) 700 mJ
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 150A
Drain-source On Resistance-Max 0.04Ohm
Continuous Drain Current (ID) 60A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 4530pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 40m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 500W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Operating Temperature (Max) 175°C
Qualification Status Not Qualified
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)