FET Feature Depletion Mode
Continuous Drain Current (ID) 3A
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 5V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Input Capacitance (Ciss) (Max) @ Vds 1070pF @ 25V
Rds On (Max) @ Id, Vgs 1.5 Ω @ 1.5A, 0V
Transistor Application AMPLIFIER
Power Dissipation-Max 125W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature UL RECOGNIZED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ