IXTA3N110
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1100V 3A TO-263
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Buying Options
Total Price: USD $43.85
Unit Price: USD $43.852
≥1 USD $43.852
≥10 USD $35.98125
≥100 USD $34.85645
≥500 USD $33.7326
≥1000 USD $32.6078
Inventory: 1126
Minimum: 1
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Technical Details
Technical
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Resistance 4.5Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 1100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Pbfree Code yes
JESD-609 Code e3
Published 2001
Packaging Tube
Operating Temperature -55°C~150°C TJ
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 1.1kV
Pulsed Drain Current-Max (IDM) 12A
Avalanche Energy Rating (Eas) 700 mJ
Physical
Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 28 Weeks
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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