Avalanche Energy Rating (Eas) 200 mJ
Pulsed Drain Current-Max (IDM) 110A
Drain to Source Breakdown Voltage -50V
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 32A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 50V
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 39m Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 83W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ