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IXTA32N20T

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 32A TO-263
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Rds On Max 72 mΩ
Drain to Source Resistance 78mOhm
Input Capacitance 1.76nF
Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 32A
Turn-Off Delay Time 55 ns
Fall Time (Typ) 31 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Rise Time 18ns
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Input Capacitance (Ciss) (Max) @ Vds 1760pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 72mOhm @ 16A, 10V
FET Type N-Channel
Power Dissipation 200W
Element Configuration Single
Power Dissipation-Max 200W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Resistance 72MOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2010
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Supplier Device Package TO-263 (IXTA)
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 24 Weeks

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