Avalanche Energy Rating (Eas) 600 mJ
Pulsed Drain Current-Max (IDM) 660A
Drain to Source Breakdown Voltage 40V
Drain-source On Resistance-Max 0.0035Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 220A
Turn-Off Delay Time 31 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V
Current - Continuous Drain (Id) @ 25°C 220A Tc
Input Capacitance (Ciss) (Max) @ Vds 6820pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 3.5m Ω @ 50A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 360W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ