IXTA1R6N100D2-TRL
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
IXTA1R6N100D2 TRL
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Technical Details
Technical
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 0V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V
Current - Continuous Drain (Id) @ 25°C 1.6A Tj
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 10 Ω @ 800mA, 0V
FET Type N-Channel
Power Dissipation-Max 100W Tc
Technology MOSFET (Metal Oxide)
Part Status Active
Operating Temperature -55°C~150°C TJ
Physical
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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