Avalanche Energy Rating (Eas) 100 mJ
Pulsed Drain Current-Max (IDM) 1.8A
Drain to Source Breakdown Voltage 1.2kV
Drain Current-Max (Abs) (ID) 1A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1A
Turn-Off Delay Time 54 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 17.6nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Tc
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 20 Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 63W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ