IXTA160N085T
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 85V 160A TO-263
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 1000 mJ
Pulsed Drain Current-Max (IDM) 350A
Drain to Source Breakdown Voltage 85V
Drain-source On Resistance-Max 0.006Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 160A
Turn-Off Delay Time 65 ns
Fall Time (Typ) 36 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 61ns
Gate Charge (Qg) (Max) @ Vgs 164nC @ 10V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 6m Ω @ 50A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 360W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 360W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2008
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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