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IXTA120P065T

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 65V 120A TO-263
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Buying Options
Total Price: USD $6.38
Unit Price: USD $6.37551
≥1 USD $6.37551
≥10 USD $6.01463
≥100 USD $5.67418
≥500 USD $5.353
≥1000 USD $5.05
≥3000 USD $4.76415
Inventory: 4052
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 28 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series TrenchP?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 10MOhm
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 298W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 298W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Rise Time 28 ns
Drain to Source Voltage (Vdss) 65V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 15V
Drain Current-Max (Abs) (ID) 0.12A
Drain to Source Breakdown Voltage -65V
Pulsed Drain Current-Max (IDM) 360A
Avalanche Energy Rating (Eas) 1000 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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