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IXTA100N04T2

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 40V 100A TO-263
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Buying Options
Total Price: USD $2.36
Unit Price: USD $2.36075
≥1 USD $2.36075
≥10 USD $1.93705
≥100 USD $1.87625
≥500 USD $1.81545
≥1000 USD $1.7556
Inventory: 1070
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 28 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchT2?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2690pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 25.5nC @ 10V
Rise Time 5.2 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.4 ns
Turn-Off Delay Time 15.8 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 300A
Avalanche Energy Rating (Eas) 300 mJ

Compliance

RoHS Status ROHS3 Compliant

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