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IXTA08N100P

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 0.8A TO-263
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 80 mJ
Pulsed Drain Current-Max (IDM) 1.8A
Drain to Source Breakdown Voltage 1kV
Drain Current-Max (Abs) (ID) 0.8A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 800mA
Turn-Off Delay Time 35 ns
Fall Time (Typ) 34 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 37 ns
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Vgs(th) (Max) @ Id 4V @ 50μA
Rds On (Max) @ Id, Vgs 20 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 42W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 42W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series Polar?
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 28 Weeks

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