FET Feature Depletion Mode
Continuous Drain Current (ID) 800mA
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 5V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V
Rds On (Max) @ Id, Vgs 21 Ω @ 400mA, 0V
Transistor Application SWITCHING
Power Dissipation-Max 60W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ