FET Feature Super Junction
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 38A
Turn-Off Delay Time 110 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Current - Continuous Drain (Id) @ 25°C 38A Tc
Vgs(th) (Max) @ Id 3.9V @ 3mA
Rds On (Max) @ Id, Vgs 70m Ω @ 25A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Technology MOSFET (Metal Oxide)
Max Power Dissipation 280W
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ