FET Feature Super Junction
Avalanche Energy Rating (Eas) 670 mJ
Drain to Source Breakdown Voltage 800V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 25A
Turn-Off Delay Time 72 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 355nC @ 10V
Current - Continuous Drain (Id) @ 25°C 25A Tc
Vgs(th) (Max) @ Id 4V @ 2mA
Rds On (Max) @ Id, Vgs 150m Ω @ 18A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Max Power Dissipation 250W
Subcategory FET General Purpose Power
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ