IXKP10N60C5
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 10A TO220AB
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
FET Feature Super Junction
Avalanche Energy Rating (Eas) 225 mJ
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.385Ohm
Drain Current-Max (Abs) (ID) 600A
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 10A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 100V
Vgs(th) (Max) @ Id 3.5V @ 340μA
Rds On (Max) @ Id, Vgs 385m Ω @ 5.2A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 109W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Series CoolMOS?
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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