Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Nickel (Ni)
Additional Feature UL RECOGNIZED, AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 380W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 74m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 3.9V @ 4mA
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 44A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
Avalanche Energy Rating (Eas) 670 mJ
FET Feature Super Junction