IXKH35N60C5
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 35A TO247AD
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Buying Options
Total Price: USD $10.04
Unit Price: USD $10.0408
≥1 USD $10.0408
≥10 USD $8.13091
≥100 USD $7.65248
≥500 USD $6.935069
≥1000 USD $6.361142
Inventory: 90
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series CoolMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 100MOhm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 357W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1.2mA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 35A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 800 mJ
FET Feature Super Junction
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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