FET Feature Super Junction
Avalanche Energy Rating (Eas) 522 mJ
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 24A
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 100V
Vgs(th) (Max) @ Id 3.5V @ 790μA
Rds On (Max) @ Id, Vgs 165m Ω @ 12A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ