IXKG25N80C
RoHS 
RoHS compliant
RoHS compliantPackage ISO264?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 25A ISO264
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISO264?
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series CoolMOS?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 2mA
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 166nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.15Ohm
Drain to Source Breakdown Voltage 800V
Avalanche Energy Rating (Eas) 690 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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